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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1098 2SC1098A DESCRIPTION With TO-202 package High Voltage High transition frequency APPLICATIONS Audio frequency power amplifier Low speed switching Suitable for output stages of 5~17W small stereo sets PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO PARAMETER Fig.1 simplified outline (TO-202) and symbol VCEO HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current SEM GE 2SC1098 2SC1098A Open emitter OND IC CONDITIONS TOR UC VALUE 70 45 V 60 UNIT V Open base VEBO IC ICM IB Open collector 5 3 5 0.6 V A A A Ta=25ae PT Total power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 1.2 W 10 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage 2SC1098 V(BR)CEO Collector-emitter breakdown voltage 2SC1098A hFE-1 hFE-2 ICBO IEBO COB fT DC current gain DC current gain Collector cut-off current Emitter cut-off current IC=20mA ; VCE=5V IC=0.5A ; VCE=5V VCB=45V ;IE=0 VEB=3V; IC=0 IE=0; VCB=10V;f=1MHz IC=0.1A ; VCE=5V IC=10mA; IB=0 CONDITIONS IC=1.5A; IB=0.15 A IC=1.5A; IB=0.15 A 2SC1098 2SC1098A SYMBOL VCEsat VBEsat MIN TYP. MAX 2.0 2.0 UNIT V V 45 V 60 20 40 250 1.0 1.0 |I |I A A pF MHz Output capacitance M L K Transition frequency hFE-2 Classifications N 40-60 HAN INC 50-100 80-160 SEM GE 120-250 OND IC TOR UC 40 60 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1098 2SC1098A SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions 3 |
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